News

The independently developed Diamond-Silicon Carbide Composite Material project by Henan Huang he Whirlwind has achieved major phased results, with core performance indicators reaching internationally advanced levels.

The newly developed Diamond-Silicon Carbide Composite Material features a thermal conductivity exceeding 700 W/(m·K) and a low thermal expansion coefficient of 2.6 ppm/℃. It is highly matched with the 2.5 ppm/℃ thermal expansion coefficient of silicon chip substrates, successfully solving the core pain points of heat dissipation and thermal matching for high-computing-power chips. It provides an efficient heat dissipation solution for the continuous upgrading of AI computing power to the kilowatt level.

In recent years, Huang he Whirlwind has taken the semiconductor heat dissipation track as the core direction of its strategic transformation, accelerating the industrialization process of high-value-added diamond heat dissipation materials.

The Company launched the MPCVD Polycrystalline Diamond heat sink wafer project in May 2023; achieved R&D breakthroughs in 2–8 inch diamond wafers successively in 2024; and officially put into operation China’s first 8-inch diamond heat sink wafer production line on February 28, 2026, marking a crucial leap from laboratory technology to large-scale mass production.

Huang he Whirlwind is also advancing the R&D of a series of heat dissipation materials such as Diamond-Copper Composite and Diamond-Aluminum Composite simultaneously.